| PART |
Description |
Maker |
| PBSS5250T |
PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.
|
NXP Semiconductors N.V.
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| IXGH31N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGN72N60A3 |
Ultra Low Vsat PT IGBT for up to 5kHz switching
|
IXYS Corporation
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS4140U |
40V Low VCEsat NPN Transistor
40 V low VCEsat NPN transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
